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effective december 1998 ? revised march 2003 ? page 1 silicon carbide substrates product specifications 4h silicon carbide (n/p-type) 6h silicon carbide (n/p-type)
page 2 ? effective december 1998 ? revised march 2003 properties and specifications for silicon carbide applications: ? high frequency power devices ? high power devices ? high temperature devices ? optoelectronic devices ? iii-v nitride deposition physical properties polytype single crystal 4h single crystal 6h crystal structure hexagonal hexagonal bandgap 3.26 ev 3.03 ev thermal conductivity (typical range) 3.0-3.8 w/cm ? k @ 298k (2.3-2.8 w/cm ? k @ 373k) 3.0-3.8 w/cm ? k @ 298k (2.3-2.8 w/cm ? k @ 373k) lattice parameters a=3.073 ? c=10.053? a=3.081 ? c=15.117? mohs hardness ~9 ~9
effective december 1998 ? revised march 2003 ? page 3 product descriptions part number options w x x x x x x - x x x x 0 = no epitaxy 1 = 1 layer 2 = 2 layer 3 = 3 layer 4 = 4 layer 5 = 5 layer 0 = no epitaxy s = standard sic epitaxy t = thick sic epitaxy 0 = single side polish, si face epi ready c = single side polish, c face epi ready d = double side polish, si face epi ready g = double side polish, c face epi ready 1 = cmp polish, si face epi ready 2 = double side cmp polish, si face epi ready 0 = standard micropipe s = select micropipe l = low micropipe u = ultra-low micropipe resistivity code (see appropriate specification sheet) 0 = on-axis 3 = 3.5 off-axis 4 = 4.0 off-axis 8 = 8.0 off-axis d = 50.8mm (2.0") e = 76.2mm (3.0") p = production grade r = research grade n = n-type p = p-type s = semi-insulating t = high purity semi-insulating 4 = 4h 6 = 6h w= standard product
page 4 ? effective december 1998 ? revised march 2003 product descriptions 4h-silicon carbide 50.8mm diameter standard micropipe density part number type orientation micropipe density resistivity ohm-cm range bin w4nxd8c-0000 n 8 off 31-100 micropipes/cm 2 0.015-0.028 c w4nxd8d-0000 n 8 off 31-100 micropipes/cm 2 0.028-0.065 d w4pxd8g-0000 p 8 off n/a 2.50-8.50 g select micropipe density w4nxd8c-s000 n 8 off 16-30 micropipes/cm 2 0.015-0.028 c w4nxd8d-s000 n 8 off 16-30 micropipes/cm 2 0.028-0.065 d low micropipe density w4nxd8c-l000 n 8 off [ 15 micropipes/cm 2 0.015-0.028 c ultra-low micropipe density w4nrd8c-u000 ? n 8 off [ 5 micropipes/cm 2 0.015-0.028 c semi-insu l a t ing w4srd0r-0d00 si on-axis n/a 1e5 r w4srd8r-0d00 si 8 off n/a 1e5 r w4trd0r-0d00 hpsi on-axis n/a 1e5 r w4trd8r-0d00 hpsi 8 off n/a 1e5 r lcw substrates W4NRD0X-0000 n on-axis n/a 0.013-0.500 n/a ? - contact cree for availability
effective december 1998 ? revised march 2003 ? page 5 product descriptions 4h-silicon carbide 76.2mm diameter standard micropipe density part number type orientation micropipe density resistivity ohm-cm range bin w4nxe4c-0d00 n 4 off 31-100 micropipes/cm 2 0.015-0.028 c w4nxe8c-0d00 n 8 off 31-100 micropipes/cm 2 0.015-0.028 c w4nre0x-0d00 n on-axis n/a 0.013-0.500 n/a select micropipe density w4nxe4c-sd00 n 4 off 16-30 micropipes/cm 2 0.015-0.028 c w4nxe8c-sd00 n 8 off 16-30 micropipes/cm 2 0.015-0.028 c low micropipe density w4nxe4c-ld00 n 4 off [ 15 micropipes/cm 2 0.015-0.028 c w4nxe8c-ld00 n 8 off [ 15 micropipes/cm 2 0.015-0.028 c semi-insu l a t ing (prototype) w4txe0x-0d00 hpsi on-axis n/a n/a n/a
page 6 ? effective december 1998 ? revised march 2003 product descriptions 6h-silicon carbide 50.8mm diameter 76.2mm diameter part number type orientation resistivity ohm-cm range bin w6nxd3j-0000 n 3.5 off 0.020-0.040 j w6nxd3k-0000 n 3.5 off 0.040-0.090 k w6nxd0k-0000 n on-axis 0.040-0.090 k w6nxd0klsr-0000 n on-axis 0.040-0.090 k w6nxd3l-0000 n 3.5 off 0.090-0.150 l w6pxd3o-0000 p 3.5 off 1.00-5.00 o lcw substrates w6nrd0x-0000 n on-axis 0.020-0.200 n/a part number type orientation resistivity ohm-cm range bin w6nre0x-0000 n on-axis 0.020-0.200 n/a
effective december 1998 ? revised march 2003 ? page 7 definition of dimentional properties, terminology and methods figure 1. diameter and primary and secondary flat dimension standard specifications diameter the linear dimension across the surface of a wafer. measurement is performed manually with ansi certified digital calipers on each individual wafer (see figure 1). thickness, center point measured with ansi certified non-contact tools at the center of each individual wafer. flat length linear dimension of the flat measured with ansi certified digital calipers on a sample of one wafer per ingot (see figure 1). surface orientation denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. measured with x-ray goniometer on a sample of one wafer per ingot in the center of the wafer. orthogonal misorientation in wafers cut intentionally ?off orientation,? the angle between the projection of the normal vector to the wafers surface onto a {0001} plane and the projection on that plane of the nearest <1120> direction. primary flat the primary flat is the {1010} plane with the flat face parallel to the <1120> direction. primary flat orientation the flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane. measured on one wafer per ingot using laue back-reflection technique with manual angle measurement. secondary flat orientation a flat of shorter length than the primary orientation flat, whose position with respect to the primary orienta- tion flat identifies the face of the wafer. marking the carbon face of each individual wafer is laser marked with ocr compatible font (similar to defini- tions and characteristics in semi m12). xxxxxxx-xx
page 8 ? effective december 1998 ? revised march 2003 substrate property cree standard diameter 2.000" 0.015" 50.8mm 0.38mm thickness, centerpoint 4h and 6h on-axis standard 0.010" 0.001" 254.0m 25.4m laser (6h only) 0.0055" 0.0015" 140.0m 38.0m 4h and 6h off-axis; semi-insulating 0.0145" 0.0025" 368.0m 64.0m dopant n-type: nitrogen p-type: aluminum primary flat length 0.625" 0.065" 15.88mm 1.65mm secondary flat length 0.315" 0.065" 8.0mm 1.65mm cleaved flat length (laser substrate only) nominal 0.4" (10mm) surface orientation 6h and 4h on-axis {0001} 0.5 6h off-axis 3.5 toward <1120> 0.5 4h off-axis 8.0 toward <1120> 0.5 surface treatment silicon face polish unless otherwise specified orthogonal misorientation 5 primary flat orientation <1120> 5 secondary flat orientation carbon face 90 ccw from primary 5 silicon face 90 cw from primary 5 cleaved flat orientation (laser substrate only) 180 from primary flat is {1010} face package fluoroware ? single wafer container standard specifications 50.8mm diameter substrate specifications
effective december 1998 ? revised march 2003 ? page 9 substrate property cree standard diameter 3.000" 0.015" 76.2mm 0.38mm thickness, centerpoint 4h on and off-axis 0.0138" 0.001" 350.0m 25.4m semi-insulating 0.0145" 0.0025" 368.0m 64.0m 6h on-axis 0.010" 0.001" 254.0m 25.4m dopant n-type: nitrogen primary flat length 0.875" 0.125" 22.22mm 3.17mm secondary flat length 0.440" 0.060" 11.18mm 1.52mm surface orientation 4h and 6h on-axis {0001} 0.5 4h off-axis 4.0 toward <1120> 0.5 8.0 toward <1120> 0.5 surface treatment silicon face polish unless otherwise specified orthogonal misorientation 5 primary flat orientation <1120> 5 secondary flat orientation carbon face 90 ccw from primary 5 silicon face 90 cw from primary 5 package fluoroware ? single wafer container standard specifications 76.2mm diameter substrate specifications
page 10 ? effective december 1998 ? revised march 2003 standard specifications for polished silicon carbide substrates - surface finish standard specifications characteristics production grade research grade edge chips/indents by diffuse lighting ? none permitted 2 [ 1.5 mm width & depth orange peel/pits by diffuse lighting* g [ 10% area [ 30% area polytype areas by diffuse lighting* [ 5% area [ 20% area striations by diffuse lighting* 3 allowed [ 3mm each 20 allowed [ 7mm each area contamination (stains) by high intensity light none permitted none permitted cracks by high intensity light none permitted none permitted hex plate by high intensity light* cumulative area < 10% cumulative area < 30% scratches by high intensity light* 5 scratches to 1x wafer diameter cumulative length. 8 scratches to 1 .5 x wafer diameter cumulative length. masking defects (mounds)* quantitative by 200x microscopic inspection 10 defects in 3 or less of the 9 fields inspected in a cross pattern 10 defects in 5 or less of the 9 fields inspected in a cross pattern contamination quantitative by 200x microscopic inspection none in inspected fields none in inspected fields cumulative area defects* [ 10% area [ 30% area notes: * defect limits apply to entire wafer surface except for a 2mm edge exclusion area g pits must be < 2mm in distance from one another to be considered a reject cause ? edge chips must be > 0.5mm on r grade material to be considered a reject cause
effective december 1998 ? revised march 2003 ? page 11 standard specifications orange peel visually detectable surface roughening when viewed under diffuse illumination. pits individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a length-to-width ratio less than 5 to 1, and visible under high intensity illumination. foreign polytypes (also referred to as ?inclusions? or ?crystallites?) regions of the wafer crystallography which are poly- crystalline or of a different polytype material than the remainder of the wafer, such as 4h mixed in with a 6h type wafer. poly regions frequently exhibit color changes or distinct boundary lines, and are judged in terms of area percent under diffuse illumination. scratches a scratch is defined as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination. striations striations in silicon carbide are defined as linear crystallographic defects extending down from the surface of the wafer which may or may not pass through the entire thickness of the wafer, and generally follow crystallographic planes over its length. total usable area a cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclu- sion zone. the remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include 2mm edge exclusion). standard specifications for polished silicon carbide substrates - surface finish (area) contamination any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appear- ance resulting from smudges, stains or water spots. cracks a fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. cracks must exceed 0.010? in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. fracture lines typically exhibit sharp, thin lines of propagation, which discriminate them from material striations. edge chips any edge anomalies (including wafer saw exit marks) in excess of 1.5 mm in either radial depth or width. as viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer. edge exclusion the outer 2 mm annulus of the wafer is designated as wafer handling area and is excluded from surface finish criteria (such as scratches, pits, haze, contamination, craters, dimples, grooves, mounds, orange peel and saw marks). hex plate hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination. masking defects (also referred to as ?mound?) a distinct raised area above the wafer frontside surface as viewed with diffuse illumination. definition of terminology and methods
page 12 ? effective december 1998 ? revised march 2003 epitaxial specifications for silicon carbide notes: ? 2mm edge exclusion ? n-type epi layers <20 microns are preceeded by n-type , 1e18, 0.5 micron buffer layer ? n-type epi layers 20 microns are preceeded by n-type , 1e18, 1.0 micron buffer layer ? no buffer layer for p-type epitaxial layers ? not all doping densities are available in all thicknesses ? epitaxy on 6h polytype is limited to 10 microns ? contact cree sales for specifications on multi-layer or unique epitaxy requests standard specifications for silicon carbide epitaxial wafer - 50.8mm and 76.2mm substrates substrate orientation : epitaxy is only available for off-axis substrates. conductivity n-type p-type dopant nitrogen aluminum net doping density n d -n a n a -n d silicon face 9e14 ? 1e19/cm 3 9e14 ? 1e19/cm 3 carbon face 1e16 ? 1e19/cm 3 not available tolerance 50% 50% thickness range- silicon face 0.2-1.0 microns 25% of selected thickness 25% of selected thickness 1.1-20.0 microns 15% of selected thickness 15% of selected thickness 20.1-50.0 microns 10% of selected thickness 10% of selected thickness thickness range- carbon face 0.2-1.0 microns 25% of selected thickness not available 1.0-10.0 microns 15% of selected thickness not available
effective december 1998 ? revised march 2003 ? page 13 epitaxial specifications for silicon carbide notes: ? 2mm edge exclusion standard specifications for silicon carbide epitaxial wafer - 50.8mm and 76.2mm substrates characteristics maximum acceptability limits test methods defect definitions (see pgs. 14-15) methodology large point defects 50.8mm 30 diffuse illumination d1 m1, m2 76.2mm 60 scratches 10 lines < 2x wafer diameter d2 m1, m2 dimpling < 5% affected d3 m1, m2 step bunching 4 off-axis n/a d4 m1, m2 8 off-axis < 10% affected backside cleanliness 95% clean d5 m1, m2 edge chips 2 with radius 1.5mm d6 m2 id correct/legible yes d7 m2 wafer flats yes d7 m2 epi defects 50.8mm, 4h 75 microscopic d8-d12 m3 50.8mm, 6h 135 76.2mm, 4h 113 76.2mm, 6h 203 net doping see specification table hg probe cv - m4 thickness see specification table ftir, sims, sem - m5
page 14 ? effective december 1998 ? revised march 2003 definitions d1. large point defects defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. these features include spikes, adherent particles, chips and craters. large point defects less than 3 mm apart count as one defect. d2. scratches grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. scratches are specified by the number of discrete scratches times the total length in fractional diameter. d3. dimpling a texture resembling the surface of a golf ball. speci- fied in % affected area. d4. step bunching step bunching is visible as a pattern of parallel lines running perpendicular to the major flat. if present, estimate the % of specified area affected. d5. backside cleanliness verified by inspecting for a uniform color to the wafer backside. note there is a darker region near the center of some higher doped wafers. backside cleanliness specified as percent area clean. d6. edge chips areas where material has been unintentionally removed from the wafer. do not confuse fractures in epi crown with edge chips. d7. id correct and major wafer flat both should be readily discernible. epitaxy defects the sum of discrete microscopic defects counted in specified area. these include 3c inclusions, comet tails, carrots, particles and silicon droplets. d8. 3c inclusions regions where step-flow was interrupted during epi layer growth. typical regions are generally triangular although more rounded shapes are sometimes seen. count once per occurrence. two inclusions within 200 microns count as one. d9. comet tails comet tails have a discrete head and trailing tail. these features are aligned parallel to the major flat. usually, all comet tails tend to be of the same length. count once per occurrence. two comet tails within 200 microns count as one. d10. carrots similar to comet tails in appearance except they are more angular and lack a discrete head. if present, these features are aligned parallel to the major flat. usually, any carrots present tend to be of the same length. count once per occurrence. two carrots within 200 microns count as one. d11. particles particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the specified area. if present, count once per occur- rence. two particles within 200 microns count as one. d12. silicon droplets silicon droplets can appear as either small mounds or depressions in the wafer surface. normally absent, but if present are largely concentrated at perimeter of wafer. if present, estimate the % of specified area affected. standard specifications for silicon carbide epitaxial wafer, definitions, epitaxy defect descriptions, and methodology epitaxial specifications for silicon carbide
effective december 1998 ? revised march 2003 ? page 15 methodology m1 . 2mm edge exclusion. m2 . inspection performed under diffuse illumination. m3 . microscopic inspection performed at 100x, on an olympus bh2 uma optical microscope, or compa- rable. inspection pattern detailed in figure 2. m4 . net doping is determined in the center of the wafer using hg probe cv. m5 . thickness is determined in the center of the wafer using ftir, sims, or cross-sectional sem on available monitor wafers. figure 2. epi inspection pattern standard specifications for silicon carbide epitaxial wafer, definitions, epitaxy defect descriptions, and methodology epitaxial specifications for silicon carbide
page 16 ? effective december 1998 ? revised march 2003 4600 silicon drive durham, nc 27703 usa tel: 919-313-5300 fax: 919-313-5451 e-mail: sales@cree.com www.cree.com copyright ? 1998-2003 cree, inc. all rights reserved. permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. version mat-catalog.000

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